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  1. 1
    Atomic layer deposition : principles, characteristics, and nanotechnology applications / Tommi Kääriäinen, David Cameron, Marja-Leena Kääriäinen, and Arthur Sherman.

    Atomic layer deposition : principles, characteristics, and nanotechnology applications / Tommi Kääriäinen, David Cameron, Marja-Leena Kääriäinen, and Arthur Sherman. by Kääriäinen, Tommi

    Published 2013
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  2. 2
    Design von GaN Transistoren für leistungselektronische Anwendungen

    Design von GaN Transistoren für leistungselektronische Anwendungen by Zhytnytska, Rimma

    Published 2021
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  3. 3
    MOCVD growth of GaN-based high electron mobility transistor structures / Jr-Tai Chen.

    MOCVD growth of GaN-based high electron mobility transistor structures / Jr-Tai Chen. by Chen, Jr-Tai

    Published 2015
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  4. 4
    Advanced epitaxy for future electronics, optics, and quantum physics / by Arthur C. Gossard.

    Advanced epitaxy for future electronics, optics, and quantum physics / by Arthur C. Gossard. by Gossard, A. C.

    Published 2000
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  5. 5
    Semiconductor manufacturing handbook / edited by Hwaiyu Geng.

    Semiconductor manufacturing handbook / edited by Hwaiyu Geng.

    Published 2005
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  6. 6
    Heteroepitaxy of semiconductors theory, growth, and characterization / John E. Ayers.

    Heteroepitaxy of semiconductors theory, growth, and characterization / John E. Ayers. by Ayers, John E.

    Published 2007
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  7. 7
    SiGe and Si strained-layer epitaxy for silicon heterostructure devices edited by John D. Cressler.

    SiGe and Si strained-layer epitaxy for silicon heterostructure devices edited by John D. Cressler.

    Published 2008
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  8. 8
    Atomic layer deposition : principles, characteristics, and nanotechnology applications / Tommi Kääriäinen, David Cameron, Marja-Leena Kääriäinen, and Arthur Sherman.

    Atomic layer deposition : principles, characteristics, and nanotechnology applications / Tommi Kääriäinen, David Cameron, Marja-Leena Kääriäinen, and Arthur Sherman. by Kääriäinen, Tommi

    Published 2013
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  9. 9
    Integration of functional oxides with semiconductors / by Alexander A. Demkov, Agham B. Posadas.

    Integration of functional oxides with semiconductors / by Alexander A. Demkov, Agham B. Posadas. by Demkov, Alexander A., Posadas, Agham B.

    Published 2014
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  10. 10
    Epitaxial growth of complex metal oxides : techniques, properties and applications / edited by G. Koster, M. Huijben and G. Rijnders.

    Epitaxial growth of complex metal oxides : techniques, properties and applications / edited by G. Koster, M. Huijben and G. Rijnders.

    Published 2015
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  11. 11
    Heteroepitaxy of semiconductors : theory, growth, and characterization / John E. Ayers, University of Connecticut, Storrs, USA, Tedi Kujofsa, University of Connecticut, Storrs, USA, Paul Rago, University of Connecticut, Storrs, USA, Johanna E. Raphael, University of Connecticut, Storrs, USA.

    Heteroepitaxy of semiconductors : theory, growth, and characterization / John E. Ayers, University of Connecticut, Storrs, USA, Tedi Kujofsa, University of Connecticut, Storrs, USA... by Ayers, John E., Kujofsa, Tedi, Rago, Paul, Raphael, Johanna E.

    Published 2017
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  12. 12
    Nitride wide bandgap semiconductor material and electronic devices / Yue Hao, Jin Feng Zhang, and Jin Cheng Zhang.

    Nitride wide bandgap semiconductor material and electronic devices / Yue Hao, Jin Feng Zhang, and Jin Cheng Zhang. by Hao, Yue, 1958 March-, Zhang, Jinfeng, 1977-, Zhang, Jincheng, 1976-

    Published 2017
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  13. 13
    Nitride wide bandgap semiconductor material and electronic devices / Yue Hao, Jin Feng Zhang, Jin Cheng Zhang.

    Nitride wide bandgap semiconductor material and electronic devices / Yue Hao, Jin Feng Zhang, Jin Cheng Zhang. by Hao, Yue, 1958 March-, Zhang, Jinfeng, 1977-, Zhang, Jincheng, 1976-

    Published 2017
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  14. 14
    Heteroepitaxy of semiconductors : theory, growth, and characterization / John E. Ayers, University of Connecticut, Storrs, USA, Tedi Kujofsa, University of Connecticut, Storrs, USA, Paul Rango, University of Connecticut, Storrs, USA, Johanna E. Raphael, University of Connecticut, Storrs, USA.

    Heteroepitaxy of semiconductors : theory, growth, and characterization / John E. Ayers, University of Connecticut, Storrs, USA, Tedi Kujofsa, University of Connecticut, Storrs, USA... by Ayers, John E., Kujofsa, Tedi, Rango, Paul, Raphael, Johanna E.

    Published 2017
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  15. 15
    SiGe and Si strained-layer epitaxy for silicon heterostructure devices / edited by John D. Cressler.

    SiGe and Si strained-layer epitaxy for silicon heterostructure devices / edited by John D. Cressler.

    Published 2008
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  16. 16
    Heteroepitaxy of semiconductors : theory, growth, and characterization / John E. Ayers.

    Heteroepitaxy of semiconductors : theory, growth, and characterization / John E. Ayers. by Ayers, John E.

    Published 2007
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  17. 17
    Handbook of silicon carbide materials and devices / edited by Zhe Chuan Feng.

    Handbook of silicon carbide materials and devices / edited by Zhe Chuan Feng.

    Published 2023
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  18. 18
    Molecular beam epitaxy : materials and applications for electronics and optoelectronics / edited by Hajime Asahi (ISIR, Osaka University, Japan), Yoshiji Horikoshi (Waseda University, Tokyo, Japan).

    Molecular beam epitaxy : materials and applications for electronics and optoelectronics / edited by Hajime Asahi (ISIR, Osaka University, Japan), Yoshiji Horikoshi (Waseda Universi...

    Published 2019
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  19. 19
    Ionized-cluster beam deposition and epitaxy by Toshinori Takagi.

    Ionized-cluster beam deposition and epitaxy by Toshinori Takagi. by Takagi, Toshinori

    Published 1988
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  20. 20
    Properties of wide bandgap II-VI semiconductors edited by Rameshwar Bhargava.

    Properties of wide bandgap II-VI semiconductors edited by Rameshwar Bhargava.

    Published 1997
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