SiGe heterojunction bipolar transistors / Peter Ashburn.

SiGe heterojunction bipolar transistors /

Remarkable developments in bipolar technology over the past decade have seen the silicongermanium heterojunction bipolar transistor (SiGe HBT) emerge from research labs to enter production in radio frequency technologies. These developments have allowed SiGe BiCMOS transistors to address high-freque...

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Bibliographic Details
Main Author: Ashburn, Peter
Format: Electronic eBook
Language:English
Published: Chichester, West Sussex, England ; Hoboken, NJ : John Wiley, ?2003.
Subjects:
Bipolar transistors.
Silicon.
Germanium.
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