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|a 621.3815/284
|2 22
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1 |
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|a Maiti, C. K.
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| 245 |
1 |
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|a Strained-Si heterostructure field effect devices /
|c C.K. Maiti, S. Chattopadhyay, L.K. Bera.
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| 246 |
3 |
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|a Strained silicon heterostructure field effect devices
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| 246 |
3 |
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|a ENGnetBASE
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| 260 |
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|a Boca Raton :
|b CRC Press,
|c ?2007.
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| 300 |
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|a 1 online resource (423 pages) :
|b illustrations.
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|a text
|b txt
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|a online resource
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|a Series in materials science and engineering
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| 504 |
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|a Includes bibliographical references and index.
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| 588 |
0 |
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|a Print version record.
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| 650 |
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0 |
|a Metal oxide semiconductor field-effect transistors.
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| 650 |
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|a Silicon
|x Electric properties.
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| 700 |
1 |
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|a Chattopadhyay, Swapan,
|d 1952-
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| 700 |
1 |
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|a Bera, L. K.
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| 710 |
2 |
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|a CRC Press.
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| 830 |
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|a Series in materials science and engineering.
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|a Wentworth Institute of Technology
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|u https://ezproxywit.flo.org/login?url=https://www.taylorfrancis.com/books/9780429145520
|y Full text (WIT users only)
|
Wentworth
Institute of Technology