Wentworth
Institute of Technology
Silicon nanoelectronics /
Physics of Silicon Nanodevices D.K. Ferry, R. Akis, M.J. Gilbert, and S.M. Ramey Small MOSFETs. The Simple One-Dimensional Theory. Ballistic Transport in the MOSFET. Granularity. Quantum Behavior in the Device. The Effective Potential. Effective Carrier Wave Packet. Statistical Considerations. Quant...
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| Corporate Authors: | , |
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| Other Authors: | , |
| Format: | Electronic eBook |
| Language: | English |
| Published: |
Boca Raton :
Taylor & Francis,
2005.
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| Series: | Optical science and engineering ser.
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| Subjects: | |
| Online Access: |
Full text (WIT users only) |
Table of Contents:
- Front cover; Preface; About the Editors; Contributors; Contents; 1; Physics of Silicon Nanodevices; 2; Practical CMOS Scaling; 3; The Scaling Limit of MOSFETs due to Direct Source-Drain Tunneling; 4; Quantum Effects in Silicon Nanodevices; 5; Ballistic Transport in Silicon Nanostructures; 6; Resonant Tunneling in Si Nanodevices; 7; Silicon Single-Electron Transistor and Memory; 8; Silicon Memories Using Quantum and Single-Electron Effects; 9; SESO Memory Devices; 10; Few Electron Devices and Memory Circuits; 11; Single-Electron Logic Devices; Index.