SiGe and Si strained-layer epitaxy for silicon heterostructure devices /

Saved in:

Bibliographic Details
Other Authors:	Cressler, John D.
Format:	Electronic eBook
Language:	English
Published:	Boca Raton : CRC Press/Taylor & Francis, 2008.
Subjects:	Bipolar transistors > Materials. Silicon > Electric properties. Heterostructures. Epitaxy.
Online Access:	Full text (WIT users only)

Internet

Full text (WIT users only)