SOI lubistors : lateral, unidirectional, bipolar-type insulated-gate transistors /
Advanced level consolidation of the technology, physics and design aspects of silicon-on-insulator (SOI) lubistors No comprehensive description of the physics and possible applications of the Lubistor can be found in a single source even though the Lubistor is already being used in SOI LSIs. The boo...
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Main Author: | |
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Format: | Electronic eBook |
Language: | English |
Published: |
Singapore :
John Wiley & Sons Inc.,
[2013]
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Subjects: | |
Online Access: |
Full text (Wentworth users only) |
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082 | 0 | 4 | |a 621.3815/28 |2 23 |
100 | 1 | |a Omura, Y. |q (Yasuhisa) | |
245 | 1 | 0 | |a SOI lubistors : |b lateral, unidirectional, bipolar-type insulated-gate transistors / |c Yasuhisa Omura. |
246 | 3 | 0 | |a Lubistors |
246 | 3 | |a Silicon-on-insulator lubistors | |
264 | 1 | |a Singapore : |b John Wiley & Sons Inc., |c [2013] | |
264 | 4 | |c ©2013 | |
300 | |a 1 online resource (319 pages) : |b illustrations | ||
336 | |a text |b txt |2 rdacontent | ||
337 | |a computer |b c |2 rdamedia | ||
338 | |a online resource |b cr |2 rdacarrier | ||
504 | |a Includes bibliographical references and index. | ||
505 | 0 | |a Part one. Brief review and modern applications of pn-junction devices -- part two. Physics and modeling of SOI lubistors : thick-film devices -- part three. Physics and modeling of SOI lubistors : thin-film devices -- part four. Circuit applications -- part five. Optical device applications of SOI lubistors -- part six. SOI lubistor as a testing tool -- part seven. Future prospects -- part eight. Summary of physics for semiconductor devices and mathematics for device analyses. | |
520 | |a Advanced level consolidation of the technology, physics and design aspects of silicon-on-insulator (SOI) lubistors No comprehensive description of the physics and possible applications of the Lubistor can be found in a single source even though the Lubistor is already being used in SOI LSIs. The book provides, for the first time, a comprehensive understanding of the physics of the Lubistor. The author argues that a clear understanding of the fundamental physics of the pn junction is essential to allowing scientists and engineers to propose new devices. Since 2001 IBM has been applying the. | ||
588 | 0 | |a Print version record. | |
650 | 0 | |a Insulated gate bipolar transistors. | |
650 | 0 | |a Silicon-on-insulator technology. | |
776 | 0 | 8 | |i Print version: |a Omura, Y. |t SOI lubistors : lateral, unidirectional, bipolar-type insulated-gate transistors. |d Singapore : John Wiley & Sons Inc., [2013] |h xviii, 299 pages |z 9781118487907 |w (DLC) 2013023085 |
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