|
|
|
|
LEADER |
00000cam a2200000 a 4500 |
001 |
w1071908 |
005 |
20240610123445.0 |
006 |
a|||||s||||||||||| |
007 |
cr ||| |
008 |
060922t20072007nyua b 001 0 eng |
020 |
|
|
|a 9781420012347 (e-book : PDF)
|
035 |
|
|
|a (FlBoTFG)TAFIPE677000
|
040 |
|
|
|a FlBoTFG
|c FlBoTFG
|d UtOrBLW
|
049 |
|
|
|a WENN
|
082 |
0 |
0 |
|a 621.3815/284
|2 22
|
090 |
|
|
|a TK7871.95
|b .M27 2007
|
092 |
|
|
|a 621.3815284
|b M232
|
100 |
1 |
|
|a Maiti, C. K.
|0 nb 99178877
|
245 |
1 |
0 |
|a Strained-Si heterostructure field effect devices
|h [electronic resource] /
|c C.K. Maiti, S. Chattopadhyay, L.K. Bera.
|
246 |
3 |
|
|a Strained silicon heterostructure field effect devices
|
264 |
|
1 |
|a New York :
|b Taylor & Francis,
|c [2007]
|
264 |
|
4 |
|c ©2007
|
300 |
|
|
|a 423 pages :
|b illustrations.
|
336 |
|
|
|a text
|b txt
|2 rdacontent
|
337 |
|
|
|a computer
|b c
|2 rdamedia
|
338 |
|
|
|a online resource
|b cr
|2 rdacarrier
|
490 |
1 |
|
|a Series in materials science and engineering
|
504 |
|
|
|a Includes bibliographical references and index.
|
538 |
|
|
|a Mode of access: World Wide Web.
|
595 |
|
|
|a WIT-ENGnetBASE.mrc 20100318 pmh.
|
650 |
|
0 |
|a Metal oxide semiconductor field-effect transistors.
|0 sh 85084065
|
650 |
|
0 |
|a Silicon
|x Electric properties.
|0 sh 85122513
|
655 |
|
7 |
|a Electronic books.
|2 lcgft
|
700 |
1 |
|
|a Chattopadhyay, Swapan,
|d 1952-
|0 n 89601414
|
700 |
1 |
|
|a Bera, L. K.
|0 n 2006073526
|
730 |
0 |
|
|a ENGnetBASE.
|
776 |
1 |
|
|z 9780750309936
|
830 |
|
0 |
|a Series in materials science and engineering.
|0 no2002027825
|
951 |
|
|
|a 1071908
|
999 |
f |
f |
|i be23c84c-141a-5ffb-ae59-f6f950ec3bee
|s 889f2439-fb72-5828-9542-860669aa79a6
|t 0
|
952 |
f |
f |
|a Wentworth Institute of Technology
|b Main Campus
|c Wentworth Library
|d Ebooks
|t 0
|h Other scheme
|
856 |
4 |
0 |
|t 0
|u https://ezproxywit.flo.org/login?qurl=https://marc.crcnetbase.com/ISBN/9781420012347
|y Full text (Wentworth users only)
|