Nanoscaled semiconductor-on-insulator materials, sensors and devices : selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine / edited by Alexei N. Nazarov and Jean-Pierre Raskin.

Nanoscaled semiconductor-on-insulator materials, sensors and devices : selected, peer reviewed papers from the 6th International Workshop on Semiconductor-on-Insulator Materials and Devices, 24-28 October, 2010 Kyiv, Ukraine /

This special collection covers: 1. the technology of semiconductor-on-insulator structures and devices; 2. the physics of new SOI devices; 3. SOI sensors and MEMS; 4. nanodots, nanowires and nanofilms. The first part covers a wide variety of SemOI-based structures such as ZnO-on-Insulators, a-SiC-on...

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Bibliographic Details
Corporate Author: International Workshop on Semiconductor-on-Insulator Materials and Devices Kiev, Ukraine
Other Authors: Nazarov, A. N. (Alexei N.), Raskin, J.-P. (Jean-Pierre), 1971-
Format: Electronic Conference Proceeding eBook
Language:English
Published: Durnten-Zurich, Switzerland : Trans Tech Publications, [2011]
Series:Advanced materials research ; 276.
Subjects:
Semiconductors > Congresses.
Silicon-on-insulator technology > Congresses.
Nanoelectromechanical systems > Congresses.
Nanotechnology > Congresses.
Online Access: Full text (Wentworth users only)
Local Note:ProQuest Ebook Central
Description
Summary:This special collection covers: 1. the technology of semiconductor-on-insulator structures and devices; 2. the physics of new SOI devices; 3. SOI sensors and MEMS; 4. nanodots, nanowires and nanofilms. The first part covers a wide variety of SemOI-based structures such as ZnO-on-Insulators, a-SiC-on-Si oxide, graphite inner films fabricated by ion implantation, and others. The second part presents new devices based upon impact ionization near to the source junction, the modeling of charge transport in nano-scale SOI MOSFETs, the electrical properties of SOI MOSFETs with LaLuO3 high-k gate dielectric and the study of neutron effects upon the behavior of nanometer-scale SOI devices. The third part considers various types of SOI sensors and MEMS, together with their characteristics and applications. The fourth part describes the fabrication and properties of quantum-dimensional structures such as nanowires and nanodots. This book will therefore be useful to a wide readership.
Physical Description:1 online resource (199 pages) : illustrations
Bibliography:Includes bibliographical references and indexes.
ISBN:9783038136156
3038136158
ISSN:1022-6680 ;
1022-6680
Language:English.
Source of Description, Etc. Note:Print version record.

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