Silicon carbide and related materials 2013 / edited by Hajime Okumura [and eight others].

Silicon carbide and related materials 2013 /

The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (SiC) and related materials, and a wide range of topics from crystal growth to their power electronics applications. In these proceedings, the written version of 270 contributed papers and 13 invi...

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Bibliographic Details
Corporate Author: International Conference on Silicon Carbide and Related Materials Miyazaki-shi, Japan
Other Authors: Okumura, Hajime (Editor)
Format: Electronic Conference Proceeding eBook
Language:English
Published: Switzerland : Trans Tech Publications, 2014.
Series:Materials science forum ; v. 778-780.
Subjects:
Silicon carbide > Congresses.
Silicon carbide > Electric properties > Congresses.
Silicon-carbide thin films > Congresses.
Nitrides > Congresses.
Graphene > Congresses.
Crystal growth > Congresses.
Wide gap semiconductors > Materials > Congresses.
Wide gap semiconductors > Materials > Technological innovations > Congresses.
Online Access: Full text (Wentworth users only)
Local Note:ProQuest Ebook Central
Description
Summary:The papers cover most of the current research efforts on the wide bandgap semiconductor silicon carbide (SiC) and related materials, and a wide range of topics from crystal growth to their power electronics applications. In these proceedings, the written version of 270 contributed papers and 13 invited papers are included. The major chapters of the proceedings collect papers in the area of bulk growth of SiC, epitaxial growth of SiC, physical properties and characterization, processing, devices and application. There are three shorter chapters on graphene, III-nitrides and related materials. T.
Item Description:"The 15th International Conference on Silicon Carbide and Related Materials (ICSCRM2013) was held in Miyazaki, Japan, from September 29 through October 4, 2013. The conference provided a scientific forum on the wide bandgap semiconductors for 794 participants from 24 countries"--Preface
Physical Description:1 online resource (1205 pages) : illustrations (some color)
Bibliography:Includes bibliographical references and indexes.
ISBN:9783038263913
3038263915
ISSN:0255-5476 ;
1662-9752
Source of Description, Etc. Note:Online resource; title from HTML table of contents page (Scientific.Net viewed Mar. 12, 2014).

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